一种新型倒装芯片互连结构的研究。柱子撞

T. Wang, F. Tung, L. Foo, V. Dutta
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引用次数: 41

摘要

支柱凸起是一种新型的互连结构,包括不可回流底座和类似支柱形状的可回流帽。本研究采用电解镀的方法制备了铜基底和Sn63/Pb37共晶焊锡帽的凸柱。根据装配前是否对扁平共晶帽进行回流处理,将凸柱进一步分为预回流处理和未回流处理两类。进行了装配可行性评估和碰撞完整性评估。对可靠性前后进行了碰剪试验,并通过SEM和EDX对其破坏模式进行了表征。此外,一个10 mm/spl倍/10 mm的测试芯片,具有180个铜/共晶焊料柱凸起,间距为0.2 mm,通过不清洁的焊剂组装在BT基板上,随后进行欠填充。结果表明,装配后的柱形仍保持不变,满足细节距要求。经湿敏预处理和1000热循环试验(TCT, -40/spl℃/spl sim/125/spl℃)后,抗剪强度未见下降。EDX谱分析表明,断裂发生在Al与硅的界面区域,而非碰撞过程。此外,在相同的条件下,经过包级可靠性测试后,凸包的完整性是完整的。应力模拟结果表明,最大剪应力出现在铜柱部分,平均剪应力范围为40/spl sim/50 MPa,远低于铜的抗剪强度。
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Studies on a novel flip-chip interconnect structure. Pillar bump
Pillar bump is a novel interconnect structure, including non-reflowable base and a reflowable cap like a pillar shape. In this study, pillar bump with copper base and Sn63/Pb37 eutectic solder cap is processed via electrolytic plating. Based on whether flat eutectic cap is reflowed prior to assembly, pillar bump is further split into two categories, namely pre-reflowed and non-reflowed, respectively. Assembly feasibility assessment as well as bump integrity evaluation are carried out. Bump shear test is conducted for both before and after reliability and failure mode is characterized via SEM and EDX. Furthermore, a 10 mm/spl times/10 mm test chip having 180 Cu/eutectic solder pillar bumps with 0.2 mm pitch is assembled onto BT substrate via no clean flux and subsequently underfilled. The results show that pillar shape is still maintained after assembly that can meet fine pitch requirement. No shear strength deterioration after moisture sensitivity preconditioning and 1000 thermal cycle test (TCT, -40/spl deg/C/spl sim/125/spl deg/C) has been observed. EDX spectra indicate fracture has occurred in the interfacial region between Al and silicon, not arising from bumping process. Furthermore, bump integrity is intact after package level reliability test under the same conditions as above. Stress simulation results lead to conclusion that maximum shear stress occurs in copper pillar portion with average range of 40/spl sim/50 MPa that is much below the shear strength of copper.
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