大功率InGaN led不可预测故障标准

A. Chernyakov, A. Kartashova, N. Shmidt, E. Shabunina, N. A. Talnishnikh, A. L. Zakgeim
{"title":"大功率InGaN led不可预测故障标准","authors":"A. Chernyakov, A. Kartashova, N. Shmidt, E. Shabunina, N. A. Talnishnikh, A. L. Zakgeim","doi":"10.1109/EUROSIME.2016.7463337","DOIUrl":null,"url":null,"abstract":"The results of the degradation study of commercial InGaN/GaN LEDs with the external quantum efficiency (EQE) ~ 40-50 % at 450-460 nm are presented. It has been clarified that one of the mechanisms responsible for EQE degradation and the unpredictable failure of LEDs is the multiphonon recombination of carriers. The distorted forward branch of I-V characteristics at U <; 2V and the appearance of the SI ~j4 section on the current spectral noise density dependences on current density in LEDs before or after 100 hours of aging test are the criteria identifying an unpredictable failure.","PeriodicalId":438097,"journal":{"name":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"34 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Criteria of unpredictable failure for high-power InGaN LEDs\",\"authors\":\"A. Chernyakov, A. Kartashova, N. Shmidt, E. Shabunina, N. A. Talnishnikh, A. L. Zakgeim\",\"doi\":\"10.1109/EUROSIME.2016.7463337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of the degradation study of commercial InGaN/GaN LEDs with the external quantum efficiency (EQE) ~ 40-50 % at 450-460 nm are presented. It has been clarified that one of the mechanisms responsible for EQE degradation and the unpredictable failure of LEDs is the multiphonon recombination of carriers. The distorted forward branch of I-V characteristics at U <; 2V and the appearance of the SI ~j4 section on the current spectral noise density dependences on current density in LEDs before or after 100 hours of aging test are the criteria identifying an unpredictable failure.\",\"PeriodicalId\":438097,\"journal\":{\"name\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"34 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2016.7463337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2016.7463337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

给出了在450 ~ 460 nm处外量子效率(EQE) ~ 40 ~ 50%的商用InGaN/GaN led的降解研究结果。已经阐明了导致EQE退化和led不可预测失效的机制之一是载流子的多声子重组。I-V特性在U <处的畸变正向分支;在led进行100小时老化测试之前或之后,2V和SI ~j4部分的外观对电流光谱噪声密度的依赖是识别不可预测故障的标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Criteria of unpredictable failure for high-power InGaN LEDs
The results of the degradation study of commercial InGaN/GaN LEDs with the external quantum efficiency (EQE) ~ 40-50 % at 450-460 nm are presented. It has been clarified that one of the mechanisms responsible for EQE degradation and the unpredictable failure of LEDs is the multiphonon recombination of carriers. The distorted forward branch of I-V characteristics at U <; 2V and the appearance of the SI ~j4 section on the current spectral noise density dependences on current density in LEDs before or after 100 hours of aging test are the criteria identifying an unpredictable failure.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Design and modelling of a digital MEMS varactor for wireless applications Aerospace-electronics reliability-assurance (AERA): Three-step prognostics-and-health-monitoring (PHM) modeling approach Hybrid dynamic modeling of V-shaped thermal micro-actuators A systematic approach for reliability assessment of electrolytic capacitor-free LED drivers Numerical simulation of transient moisture and temperature distribution in polycarbonate and aluminum electronic enclosures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1