纳米管直径对cnfet性能的影响

Z. Chen, J. Appenzeller, J. Knoch, Yu-Ming Lin, P. Avouris
{"title":"纳米管直径对cnfet性能的影响","authors":"Z. Chen, J. Appenzeller, J. Knoch, Yu-Ming Lin, P. Avouris","doi":"10.1109/DRC.2005.1553137","DOIUrl":null,"url":null,"abstract":"This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a large extend","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impact of the nanotube diameter on the performance of CNFETs\",\"authors\":\"Z. Chen, J. Appenzeller, J. Knoch, Yu-Ming Lin, P. Avouris\",\"doi\":\"10.1109/DRC.2005.1553137\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a large extend\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553137\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本研究对38个cnfet进行了研究,结果表明仅用纳米管直径的变化就可以综合解释近3个数量级的电流变化。这是第一次系统地分析了器件性能与纳米管性能之间的定量关系。这也表明在很大程度上可以忽略制备对接触质量的影响
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Impact of the nanotube diameter on the performance of CNFETs
This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a large extend
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