高带宽存储器(HBM)非接触式2Gb/s I/O测试方法设计

2016 IEEE Asian Solid-State Circuits Conference (A-SSCC) Pub Date : 2016-11-01 DOI:10.1109/ASSCC.2016.7844162

Hyunui Lee, S. Kang, Hye-Seung Yu, Won-Joo Yun, Jae-Hun Jung, Sungoh Ahn, Wang-Soo Kim, Beomyong Kil, Y. Sung, Sang-Hoon Shin, Yong-Sik Park, Yong-Hwan Kim, Kyung-Woo Nam, Indal Song, Kyomin Sohn, Yong-Cheol Bae, J. Choi, Seong-Jin Jang, G. Jin

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引用次数: 3

摘要

本文提出了一种不直接接触u型凸块的HBM装置，用于验证I/O电路的直流和交流特性。为了在内部验证直流和交流特性，实现了卓越设计(DFx)电路。此外，为了在没有ZQ引脚的情况下进行精确的阻抗校准，嵌入了参考电阻校准逻辑。通过DFx交流结果与自动测试设备测量结果的对比，证实DFx交流运行与正常运行具有良好的相关性，最高可达2Gb/s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM)

This paper presents a HBM device which verifies DC and AC characteristics of I/O circuits without direct contact on the u-bump. To verify DC and AC characteristics internally, design for excellence (DFx) circuits are implemented. Also, to perform accurate impedance calibration without ZQ pin, reference resistor calibration logic is embedded. In comparison of DFx AC result and automatic test equipment measurement result, it is confirmed that the DFx AC operation is well correlated with normal operation up to 2Gb/s.

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2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)

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