Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing
{"title":"自对准InAs/Al0.45Ga0.55Sb垂直隧道场效应管","authors":"Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing","doi":"10.1109/DRC.2011.5994499","DOIUrl":null,"url":null,"abstract":"Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and I<inf>ON</inf>/I<inf>OFF</inf> ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb TFET performance.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs\",\"authors\":\"Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing\",\"doi\":\"10.1109/DRC.2011.5994499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and I<inf>ON</inf>/I<inf>OFF</inf> ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb TFET performance.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and ION/IOFF ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al0.45Ga0.55Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al0.45Ga0.55Sb TFET performance.