{"title":"利用TCAD仿真优化用于太赫兹探测的Si MOS晶体管","authors":"R. Jain, H. Rucker, N. Mohapatra","doi":"10.1109/SISPAD.2014.6931601","DOIUrl":null,"url":null,"abstract":"We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Optimization of Si MOS transistors for THz detection using TCAD simulation\",\"authors\":\"R. Jain, H. Rucker, N. Mohapatra\",\"doi\":\"10.1109/SISPAD.2014.6931601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931601\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of Si MOS transistors for THz detection using TCAD simulation
We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.
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