{"title":"用于短λ光通信的AlGaN/GaN基紫外激光二极管的性能增强","authors":"M. Khazir, M. Raja, Attaullah Shah, A. Mahmood","doi":"10.1109/HONET.2010.5715753","DOIUrl":null,"url":null,"abstract":"Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into pregion.","PeriodicalId":197677,"journal":{"name":"7th International Symposium on High-capacity Optical Networks and Enabling Technologies","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication\",\"authors\":\"M. Khazir, M. Raja, Attaullah Shah, A. Mahmood\",\"doi\":\"10.1109/HONET.2010.5715753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into pregion.\",\"PeriodicalId\":197677,\"journal\":{\"name\":\"7th International Symposium on High-capacity Optical Networks and Enabling Technologies\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th International Symposium on High-capacity Optical Networks and Enabling Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HONET.2010.5715753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on High-capacity Optical Networks and Enabling Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HONET.2010.5715753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication
Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into pregion.
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