GaAsP纳米线在GaAs上生长过程中P在纳米线和层中的不均匀分布

COMMAD 2012 Pub Date : 1900-01-01 DOI:10.1109/COMMAD.2012.6472403

W. Sun, Y. Guo, H. Y. Xu, Z. Liao, J. Zou, Q. Gao, H. Tan, C. Jagadish

{"title":"GaAsP纳米线在GaAs上生长过程中P在纳米线和层中的不均匀分布","authors":"W. Sun, Y. Guo, H. Y. Xu, Z. Liao, J. Zou, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472403","DOIUrl":null,"url":null,"abstract":"In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs\",\"authors\":\"W. Sun, Y. Guo, H. Y. Xu, Z. Liao, J. Zou, Q. Gao, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2012.6472403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472403\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在GaAs(001)衬底上生长GaAsP纳米线时，发现纳米线和无意二维(2D) GaAsP层中的P浓度不同。给出了可能的解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

COMMAD 2012

自引率

0.00%

发文量