保护SRAM PUF免受基于BTI老化的克隆攻击

Shengyu Duan, G. Sai
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引用次数: 0

摘要

SRAM物理不可克隆功能(PUF)是目前最流行的PUF之一,实际应用于IC产品中,用于执行加密等安全原语。然而,先前的研究表明,SRAM PUF的响应可能会由于CMOS老化效应之一,偏置温度不稳定性(BTI)而改变。因此,可以利用BTI根据目标PUF的响应来改变其响应,从而生产物理假冒产品。为了防止基于bti的物理克隆攻击,我们提出了一种不修改现有SRAM PUF电路的方案,即在被攻击电池上电之前对其进行预充电,使其响应受到克隆过程中无法精确老化的晶体管的影响。我们还表明SRAM puf的安全性和可靠性指标不受额外预充电阶段的影响。
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Protecting SRAM PUF from BTI Aging-based Cloning Attack
SRAM Physical Unclonable Function (PUF) is currently one of the most popular PUFs, practically adopted in IC productions, to perform security primitives like encryption. However, previous works suggest responses of an SRAM PUF may be changeable due to one of the CMOS aging effects, Bias Temperature Instability (BTI). A physical counterfeit is thereby able to be produced by using BTI to change its responses, based on those of a target PUF. To prevent the BTI-based physical cloning attack, we propose a scheme without any modifications on the current SRAM PUF circuit, which is to pre-charge a challenged cell before it is powered up, so that its response can be affected by those transistors that cannot be precisely aged in the cloning process. We also show security and reliability metrics of SRAM PUFs are not affected by the extra pre-charge phase.
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