{"title":"非均匀半导体材料光吸收系数计算的新理论处理","authors":"Jianxin Zhu, R. Shen","doi":"10.1109/HKEDM.2000.904236","DOIUrl":null,"url":null,"abstract":"In this paper, for a semiconductor material in which the thermal conductivity is varied as a function of depth, we propose an efficient method to inversely compute the depth distribution of optical-absorption coefficient by the surface temperature of the material.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new theoretical treatment for the computation of optical-absorption coefficient in inhomogeneous semiconductor material\",\"authors\":\"Jianxin Zhu, R. Shen\",\"doi\":\"10.1109/HKEDM.2000.904236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, for a semiconductor material in which the thermal conductivity is varied as a function of depth, we propose an efficient method to inversely compute the depth distribution of optical-absorption coefficient by the surface temperature of the material.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new theoretical treatment for the computation of optical-absorption coefficient in inhomogeneous semiconductor material
In this paper, for a semiconductor material in which the thermal conductivity is varied as a function of depth, we propose an efficient method to inversely compute the depth distribution of optical-absorption coefficient by the surface temperature of the material.
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