{"title":"降低电源电压噪声的中间装置","authors":"Y. Uematsu, M. Yagyu, H. Osaka","doi":"10.1109/EPEPS.2012.6457892","DOIUrl":null,"url":null,"abstract":"This report proposes low power supply noise interposers with two types of structures based on embedding technologies. These structures reduce (i) self-noise and (ii) transfer-noise. We designed and developed these two structures and evaluated them experimentally. Using small chip components (0402) permitted interposer heights of less than 0.6 mm. The measurement results indicate the following: (i) reductions of on-chip power supply noise on the order of several hundreds of MHz; (ii) S21 less than -60dB achieved from 10 MHz to a few GHz.","PeriodicalId":188377,"journal":{"name":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interposers for power supply voltage noise reduction\",\"authors\":\"Y. Uematsu, M. Yagyu, H. Osaka\",\"doi\":\"10.1109/EPEPS.2012.6457892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This report proposes low power supply noise interposers with two types of structures based on embedding technologies. These structures reduce (i) self-noise and (ii) transfer-noise. We designed and developed these two structures and evaluated them experimentally. Using small chip components (0402) permitted interposer heights of less than 0.6 mm. The measurement results indicate the following: (i) reductions of on-chip power supply noise on the order of several hundreds of MHz; (ii) S21 less than -60dB achieved from 10 MHz to a few GHz.\",\"PeriodicalId\":188377,\"journal\":{\"name\":\"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEPS.2012.6457892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 21st Conference on Electrical Performance of Electronic Packaging and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS.2012.6457892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interposers for power supply voltage noise reduction
This report proposes low power supply noise interposers with two types of structures based on embedding technologies. These structures reduce (i) self-noise and (ii) transfer-noise. We designed and developed these two structures and evaluated them experimentally. Using small chip components (0402) permitted interposer heights of less than 0.6 mm. The measurement results indicate the following: (i) reductions of on-chip power supply noise on the order of several hundreds of MHz; (ii) S21 less than -60dB achieved from 10 MHz to a few GHz.