硅评估比高速过渡延迟试验快

S. Chakravarty, Narendra Devta-Prasanna, A. Gunda, Junxia Ma, Fan Yang, H. Guo, R. Lai, D. Li
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引用次数: 11

摘要

研究人员在对不同覆盖度量进行理论分析的基础上,提出了覆盖小延迟缺陷(SDD)的必要性。很少有硅数据证明需要将SDD测试添加到制造流程中。本文试图填补这一空白。描述了一项高容量制造实验,以确定FAST_TDF试验对缺陷部件和婴儿死亡率的附加筛选能力。给出了定量硅数据。
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Silicon evaluation of faster than at-speed transition delay tests
Researchers, based primarily on theoretical analysis of different coverage metric, have proposed the need to cover small delay defect (SDD). There is very little silicon data justifying the need to add SDD tests to the manufacturing flow. This paper attempts to fill this gap. A high volume manufacturing experiment to ascertain the added screening capability of defective parts and infant mortality of FAST_TDF tests are described. Quantitative silicon data are presented.
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