T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin
{"title":"用于毫米波应用的高击穿电压GaN-HEMT","authors":"T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin","doi":"10.1109/CSICS07.2007.10","DOIUrl":null,"url":null,"abstract":"The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications\",\"authors\":\"T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin\",\"doi\":\"10.1109/CSICS07.2007.10\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS07.2007.10\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications
The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.
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