{"title":"射频放大器中MOSFET结温的热管理","authors":"Z. Qi, Hua-jun Dong, Yahong Wang, J. Reif","doi":"10.1109/STHERM.2011.5767195","DOIUrl":null,"url":null,"abstract":"MOSFETs in an RF amplifier dissipate high heat flux due to switching and conduction loss. MOSFET's junction temperature affects product reliability adversely. This paper presents a thermal management method used in an RF amplifier development with junction to case temperature rise transient analysis, Thermal Interface Material (TIM) testing, clamping structural Finite Element Analysis (FEA), and Computational Fluid Dynamics (CFD) aided cold plate optimization. Using the systematic method presented in this paper, thermal management of MOSFET junction temperature can be implemented with clear insights of temperature budget consumption in each section, and optimization options.","PeriodicalId":128077,"journal":{"name":"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Thermal management of MOSFET junction temperature in RF amplifier\",\"authors\":\"Z. Qi, Hua-jun Dong, Yahong Wang, J. Reif\",\"doi\":\"10.1109/STHERM.2011.5767195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOSFETs in an RF amplifier dissipate high heat flux due to switching and conduction loss. MOSFET's junction temperature affects product reliability adversely. This paper presents a thermal management method used in an RF amplifier development with junction to case temperature rise transient analysis, Thermal Interface Material (TIM) testing, clamping structural Finite Element Analysis (FEA), and Computational Fluid Dynamics (CFD) aided cold plate optimization. Using the systematic method presented in this paper, thermal management of MOSFET junction temperature can be implemented with clear insights of temperature budget consumption in each section, and optimization options.\",\"PeriodicalId\":128077,\"journal\":{\"name\":\"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.2011.5767195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2011.5767195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal management of MOSFET junction temperature in RF amplifier
MOSFETs in an RF amplifier dissipate high heat flux due to switching and conduction loss. MOSFET's junction temperature affects product reliability adversely. This paper presents a thermal management method used in an RF amplifier development with junction to case temperature rise transient analysis, Thermal Interface Material (TIM) testing, clamping structural Finite Element Analysis (FEA), and Computational Fluid Dynamics (CFD) aided cold plate optimization. Using the systematic method presented in this paper, thermal management of MOSFET junction temperature can be implemented with clear insights of temperature budget consumption in each section, and optimization options.
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