基于元件缺陷密度的微电子可靠性预测

J. Stevenson, J. A. Nachlas
{"title":"基于元件缺陷密度的微电子可靠性预测","authors":"J. Stevenson, J. A. Nachlas","doi":"10.1109/ARMS.1990.67985","DOIUrl":null,"url":null,"abstract":"A physics-of-failure approach to reliability prediction for integrated circuits is discussed. The analysis described is based upon the expectation that no integrated circuit can ever be free of imperfections and the assumption that both microscopic (point) defects and macroscopic flaws play influential roles in determining IC reliability. It is demonstrated that the microscopic defects can be directly implicated in gradual degradation over time via analyses related to those used in modeling a variety of solid-state phenomena.<<ETX>>","PeriodicalId":383597,"journal":{"name":"Annual Proceedings on Reliability and Maintainability Symposium","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Microelectronic reliability predictions derived from component defect densities\",\"authors\":\"J. Stevenson, J. A. Nachlas\",\"doi\":\"10.1109/ARMS.1990.67985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physics-of-failure approach to reliability prediction for integrated circuits is discussed. The analysis described is based upon the expectation that no integrated circuit can ever be free of imperfections and the assumption that both microscopic (point) defects and macroscopic flaws play influential roles in determining IC reliability. It is demonstrated that the microscopic defects can be directly implicated in gradual degradation over time via analyses related to those used in modeling a variety of solid-state phenomena.<<ETX>>\",\"PeriodicalId\":383597,\"journal\":{\"name\":\"Annual Proceedings on Reliability and Maintainability Symposium\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annual Proceedings on Reliability and Maintainability Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARMS.1990.67985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annual Proceedings on Reliability and Maintainability Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARMS.1990.67985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

讨论了集成电路可靠性预测的失效物理方法。所描述的分析是基于这样的期望,即没有集成电路可以没有缺陷,并且假设微观(点)缺陷和宏观缺陷在决定集成电路可靠性方面都起着影响作用。通过与各种固态现象建模相关的分析表明,微观缺陷可以直接涉及随着时间的推移逐渐降解
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Microelectronic reliability predictions derived from component defect densities
A physics-of-failure approach to reliability prediction for integrated circuits is discussed. The analysis described is based upon the expectation that no integrated circuit can ever be free of imperfections and the assumption that both microscopic (point) defects and macroscopic flaws play influential roles in determining IC reliability. It is demonstrated that the microscopic defects can be directly implicated in gradual degradation over time via analyses related to those used in modeling a variety of solid-state phenomena.<>
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