低成本Mcm-D制造的薄膜转移工艺

C. Narayan, S. Purushothaman, F. Doany, A. Deutsch
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引用次数: 19

摘要

本文描述了一种独特的、高度灵活和具有成本竞争力的方法来制造需要薄膜互连的微电子封装。该方法包括在可重复使用的临时玻璃载体上制造多层薄膜金属/聚合物结构,然后将薄膜堆栈转移到所选的产品基板上。最终产品衬底可以是硅、共烧氧化铝或玻璃陶瓷、氮化铝、金刚石或印刷线路板。可选地,也可以将释放的薄膜贴花本身用作灵活的高可连接性互连,作为中间层,或用于已知优良芯片(KGD)的晶圆级测试应用。薄膜布线结构可以在薄膜互连代工厂中在标准化的形状因子载体(与最终产品衬底的特性无关)上进行多重制造,从而从规模经济和薄膜工厂的充分利用两方面显着降低成本,以满足各种客户需求。
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Thin Film Transfer Process for Low Cost Mcm-D Fabrication
This paper describes a unique, highly flexible and cost competitive method to fabricate microelectronic packages that require thin film interconnections. The method involves fabricating thin film metal/polymer structures multi-up on a reusable temporary glass carrier and later transferring the thin film stack onto product substrates of choice. The final product substrate can be silicon, co-fired alumina or glass-ceramic, aluminum nitride, diamond or a printed wiring board. Optionally, one can also use the released thin film decal as a flexible high wireability interconnect by itself, as an interposer, or in applications Re wafer level testing for known good die (KGD). The thin film wiring structure can be fabricated multi-up on a standardized form factor carrier (independent of the characteristics of the final product substrate) in a thin film interconnect foundry, thus significantly reducing cost both from the economy of scales and full utilization of the thin film factory for a variety of customer needs.
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