自偏置电阻反馈电流复用CMOS超宽带LNA与1.7dB nf用于IR-UWB应用

R. Erfani, Fatemeh Marefat, M. Ehsanian
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引用次数: 4

摘要

本文提出了一种用于脉冲无线电超宽带(IR-UWB)应用的自偏置电阻反馈电流复用CMOS低噪声放大器(LNA)。宽带输入、级间和输出匹配是通过使用带感应峰值的两级电阻反馈放大器实现的。因此,可以同时实现高而平坦的功率增益(S21)、低而高度平坦的噪声系数(NF)和小的群延迟变化。通过采用电阻反馈,不仅保证了宽带匹配,而且两级均采用自偏置技术(节省了功率和面积),完全消除了输入偏置电路的噪声贡献(具有更好的NF性能)。因此,在整个感兴趣的频带(即3-11GHz)中,NF保持在2db以下,可以实现1.7dB (@7GHz)的最先进的NF。S21为12.9±0.45dB,群延迟变化为68.5±17.5ps。该UWB LNA采用0.18μm CMOS技术,在1.5V电压下功耗为10.35mW。
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Self-biased resistive-feedback current-reused CMOS UWB LNA with 1.7dB nf for IR-UWB applications
In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay variation are simultaneously achieved. By employing resistive-feedback, not only wideband matching is guaranteed, but also both stages adopt self-biasing technique (power and area saving) which totally removes noise contribution of bias circuitry at the input (better NF performance). As a result, state-of-the-art NF of 1.7dB (@7GHz) is achieved where across the whole frequency band of interest (i.e., 3-11GHz) NF remains below 2 dB. A flat S21 of 12.9±0.45dB and small group-delay variation of 68.5±17.5ps are also achieved. The proposed UWB LNA dissipates 10.35mW under supply of 1.5V in 0.18μm CMOS technology.
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