Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block
{"title":"在100mm InP衬底上的0.1 μm pt下凹栅InP HEMT低噪声放大器的高可靠性性能","authors":"Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block","doi":"10.1109/ICIPRM.2010.5516184","DOIUrl":null,"url":null,"abstract":"Accelerated temperature lifetesting at T<inf>channel</inf> of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10<sup>8</sup> hours at T<inf>channel</inf> of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates\",\"authors\":\"Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block\",\"doi\":\"10.1109/ICIPRM.2010.5516184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated temperature lifetesting at T<inf>channel</inf> of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10<sup>8</sup> hours at T<inf>channel</inf> of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates
Accelerated temperature lifetesting at Tchannel of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×108 hours at Tchannel of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.
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