1/f基于氧化铪的ReRAM器件的交流+直流测量噪声分析

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904906

N. Mahmud, Avyaya J. Narasimham, J. Lloyd

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引用次数: 0

摘要

1/f采用交流+直流测量技术研究了基于氧化铪的双极ReRAM器件的噪声水平。初步结果支持了电流在低阻状态(LRS)下通过低阻富金属灯丝，而在高阻状态(HRS)下电流为陷阱辅助电流的观点。这里使用的技术，可以估计大约1赫兹的噪音水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement technique

1/f Noise levels in Hafnium Oxide based bipolar ReRAM devices are studied using an ac + dc measurement technique. Preliminary results support the idea that the current conducts through a low resistive metal rich filament at low resistance state (LRS) and the current at high resistance state (HRS) is a trap-assisted current. The technique used here, allows to estimate the noise levels around 1 Hz.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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