N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin
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Charge properties of MIS structures Ni-Dy/sub x/O/sub y/-n-Si [100]
The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.
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