深亚微米I/sub DDQ/测试:问题及解决方案

M. Sachdev
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引用次数: 69

摘要

晶体管亚阈值泄漏电流的增大对深亚微米I/sub DDQ/测试的有效性造成了威胁。在本文中,我们探讨了可能的解决方案,并提出了一种深亚微米I/sub DDQ/测试模式。该方法为I/sub DDQ/组件的明确测量和缺陷诊断提供了手段。通过实例验证了该测试模式的有效性。
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Deep sub-micron I/sub DDQ/ testing: issues and solutions
The effectiveness of I/sub DDQ/ testing in deep sub-micron is threatened by the increased transistor sub-threshold leakage current. In this article, we survey possible solutions and propose a deep sub-micron I/sub DDQ/ test mode. The methodology provides means for unambiguous measurements of I/sub DDQ/ components and defect diagnosis. The effectiveness of the test mode is demonstrated with a real life example.
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