采用谐振隧道二极管和InAlGaAs/InP复合集电极的太赫兹振荡器

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-02-13 DOI:10.1109/ICIPRM.2013.6562603

R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama

{"title":"采用谐振隧道二极管和InAlGaAs/InP复合集电极的太赫兹振荡器","authors":"R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama","doi":"10.1109/ICIPRM.2013.6562603","DOIUrl":null,"url":null,"abstract":"We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector\",\"authors\":\"R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama\",\"doi\":\"10.1109/ICIPRM.2013.6562603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-02-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们提出了一种具有InAlGaAs/InP复合集热器的谐振隧道二极管(RTD)，以减少集热器耗尽区由γ到L谷跃迁引起的传输延迟。用该RTD制备的太赫兹振荡器显示出680-770 GHz的室温基本振荡，RTD面积为1-1.5平方微米。通过减小RTD面积，可以获得更高的频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量