均匀掺杂石墨烯纳米带晶体管(GNR)场效应管的量子模拟研究

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472363

N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone

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引用次数: 6

摘要

本文研究了均匀掺杂石墨烯纳米带场效应管(gnfet)的性能。在电子-声子相互作用下，利用基于负场函数的三维量子力学模拟研究了gnfet的性能。我们发现，与常规掺杂的石墨烯相比，均匀掺杂的GNRFET提高了GNRFET器件的迁移率和性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation

In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.

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COMMAD 2012

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