T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi
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Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs
This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance
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