{"title":"位置控制种子阵列金属有机化学气相沉积在精确Si(001)衬底上生长低缺陷密度InP","authors":"Qiang Li, C. Tang, K. Lau, R. Hill, A. Vert","doi":"10.1109/ICIPRM.2014.6880514","DOIUrl":null,"url":null,"abstract":"Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays\",\"authors\":\"Qiang Li, C. Tang, K. Lau, R. Hill, A. Vert\",\"doi\":\"10.1109/ICIPRM.2014.6880514\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880514\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays
Growth of InP with high crystalline quality on exact Si (001) substrates is reported. InP seed arrays were deposited in 30 nm-wide SiO2 trenches along the [1 -1 0] direction on Si substrates. Coalesced InP films were regrown on the seed layer arrays after removal of the SiO2 mask. Cross-sectional transmission electron microscopy shows anisotropic distribution of defects along the [1 1 0] and [1 -1 0] directions. From x-ray diffraction measurement, full-width-at-half-maximum as small as 78 arcsec has been achieved from 2.3 μm InP in a coupled ω/2θ scan.
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