John Zahurakt, Iliadis, Stephen, Rishtont, Ted Masselinkt
{"title":"高场电子输运特性对InGaAs/InAlAs异质结构晶体管性能的影响","authors":"John Zahurakt, Iliadis, Stephen, Rishtont, Ted Masselinkt","doi":"10.1109/CORNEL.1993.303096","DOIUrl":null,"url":null,"abstract":"We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5/spl times/10/sup 7/ cm/s were measured for various delta-doped wells, while a peak velocity of 2.0/spl times/10/sup 7/ cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 /spl mu/m gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had g/sub m/=338 mS/mm. MODFETs with 0.5 /spl mu/m gates yielded g/sub m/=590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures\",\"authors\":\"John Zahurakt, Iliadis, Stephen, Rishtont, Ted Masselinkt\",\"doi\":\"10.1109/CORNEL.1993.303096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5/spl times/10/sup 7/ cm/s were measured for various delta-doped wells, while a peak velocity of 2.0/spl times/10/sup 7/ cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 /spl mu/m gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had g/sub m/=338 mS/mm. MODFETs with 0.5 /spl mu/m gates yielded g/sub m/=590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of high field electron transport characteristics on transistor performance in InGaAs/InAlAs heterostructures
We have studied electron transport in a variety of doped and modulation-doped InGaAs/AlInAs quantum wells within the context of FET performance in devices fabricated from the same structures. Electron velocities in the structure were characterized using Hall, geometric magnetoresistance, and high-frequency velocity-field measurements. Peak velocities of 1.5/spl times/10/sup 7/ cm/s were measured for various delta-doped wells, while a peak velocity of 2.0/spl times/10/sup 7/ cm/s was measured for the MODFET structure. The effect of various well widths on the transport characteristics was also studied. FETs with 1.8 /spl mu/m gate lengths and uniformly doped channels had transconductances of 267 mS/mm while the MODFET had g/sub m/=338 mS/mm. MODFETs with 0.5 /spl mu/m gates yielded g/sub m/=590 mS/mm. In general, device performance was well correlated to the peak electron velocity and only somewhat correlated to the low-field mobility.<>
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