一种新型GaSb/AlSb/InAs高效整流二极管

R. Ferro, R. Robson, W. Hooper, T. Hasenberg, L.D. Bailey, S. Newell
{"title":"一种新型GaSb/AlSb/InAs高效整流二极管","authors":"R. Ferro, R. Robson, W. Hooper, T. Hasenberg, L.D. Bailey, S. Newell","doi":"10.1109/CORNEL.1993.303103","DOIUrl":null,"url":null,"abstract":"We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel GaSb/AlSb/InAs high efficiency rectifying diode\",\"authors\":\"R. Ferro, R. Robson, W. Hooper, T. Hasenberg, L.D. Bailey, S. Newell\",\"doi\":\"10.1109/CORNEL.1993.303103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们利用超晶格的MBE生长制备了一种新型带间谐振隧道二极管,其每个周期由GaSb、AlSb和InAs层组成。该二极管被设计为通过共振带间隧道在正向偏置中导电,因此整个堆栈看起来像是短路。反向偏置电流受到带隙阻塞的阻碍。反向击穿电压随周期数的变化而变化,每个周期能够阻断约0.4 V。四周期二极管在小于0.3 V的正向偏压下传导5000a /cm/sup /。
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A novel GaSb/AlSb/InAs high efficiency rectifying diode
We have fabricated a novel type of interband resonant tunnel diode by MBE growth of a superlattice, each period of which consists of layers of GaSb, AlSb and InAs. The diode is designed to conduct in forward bias by resonant interband tunneling, so that the entire stack appears to be a short circuit. Reverse bias current is impeded by band gap blocking. The reverse breakdown voltage varies with the number of periods, with each period capable of blocking about 0.4 V. A four period diode conducts 5000 A/cm/sup 2/ at less than 0.3 V of forward bias.<>
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