Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
{"title":"88-98 GHz功率放大器在90纳米CMOS","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543354","DOIUrl":null,"url":null,"abstract":"A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 88–98 GHz power amplifier in 90 nm CMOS\",\"authors\":\"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin\",\"doi\":\"10.1109/ISNE.2016.7543354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.
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