88-98 GHz功率放大器在90纳米CMOS

Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
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引用次数: 0

摘要

设计了一种采用低成本90纳米CMOS工艺技术的88 ~ 98 GHz宽带功率放大器。采用了共源(CS)结构的正反馈和y型功率分配器和组合来提高功率放大器的性能。该放大器在94 GHz时的模拟饱和输出功率(PSAT)为17 dBm,输出参考1db压缩点(OP1dB)为15.2 dBm,功率附加效率(PAE)为16.4%,增益为20.4dB。此外,在94 GHz时,输入和输出反射系数都低于-10dB。仿真结果表明,所采用的方法可以有效地提高放大器的增益、OP1dB和PAE。
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A 88–98 GHz power amplifier in 90 nm CMOS
A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.
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