伽马辐射下金属辅助化学蚀刻获得的硅纳米晶须光学性质

O. Belobrovaya, V. Galushka, V. Polyanskaya, V. Sidorov, D. Terin, A. Mashkov
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引用次数: 0

摘要

本文讨论了用金属辅助化学刻蚀法对形成过程中低剂量辐照的γ量子所获得的多孔硅纳米结构的光学性质的研究结果。所得样品的全反射不仅与成形层的辐照剂量有关,还与原位控制初始硅片的初步辐照剂量有关。通过对样品拉曼光谱的研究,证实了光谱的变化是由于小剂量γ-量子对初始硅片的影响和γ辐射对形成SiNWs的原位影响造成的。我们观察到在形成多孔层的相同辐照剂量下,初始硅片的辐照量从0到40 kR变化,光致发光的最大波长从600 nm变化到750 nm。
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Optical Properties of Silicon Nanowhiskers Obtained by Metal-Assisted Chemical Etching under Gamma Irradiation
The results of a study of the optical properties of porous silicon nanostructures obtained by metal-assisted chemical etching of γ-quanta irradiated with low doses during their formation are discussed. The total reflection from the obtained samples depends not only on the irradiation dose of the forming layer, but also on the dose of preliminary irradiation of the initial silicon wafer by in situ control. By studying the Raman spectra of the samples, it was confirmed that changes in the spectra take place both due to the effect of small doses of γ-quanta on the initial silicon wafers and due to the in situ effect of gamma radiation on the forming SiNWs. We observed a shift in the wavelength of the photoluminescence maximum from 600 nm to 750 nm with a change in the irradiation of the initial silicon wafer from 0 to 40 kR at the same dose of irradiation of the forming porous layer.
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