Design of Low Pull-In Voltage and High Isolation of Step Structure Capacitive RF MEMS Switch for Satellite Applications

In this paper, we have designed a novel step-down structure RF MEMS switch with low actuation voltage and high performance characteristics for K - band applications. A material for the beam and dielectric layer is chosen by the Ashby's methodology based on the key performance indices. The device has optimized by the parameters like Pull-In voltage, capacitance ratio and switching time. The stress distribution analysis and C - V characteristics ensures that the reliability of the switch. The switch is simulated using FEM tool to observe the electromechanical and electromagnetic performance characteristics. The proposed RF MEMS switch shows high isolation of −61dB is observed at 27 GHz during OFF state. During ON state, the switch exhibits a low insertion loss less than −1dB and low return loss of less than −10 dB in the K-band frequency range. The proposed switch structure is highly compatible to integrate with Antenna which is highly preferable technique to reconfigure antenna characteristics.