铜衬垫碰撞金属化(UBM)系统下低成本倒装芯片的研究

Jae-Woong Nab, K. Paik
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引用次数: 2

摘要

由于铜具有低电阻率和优异的抗电迁移性能,被认为是硅基集成电路中替代铝基互连材料的一种有前途的互连材料。采用化学镀铜(E-Cu)和化学镀镍(E-Ni)作为低成本替代方法,研究了用于铜焊盘倒装片互连的新型碰撞和UBM材料系统。经过优化设计的E-Ni/E-Cu双层材料体系不仅可以作为钎料凸点的UBMs,还可以作为钎料凸点本身。本研究成功地展示了在有机衬底上使用各向异性导电粘合剂组装的化学镀E-Ni/E-Cu凸起。
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Investigation of low cost flip chip under bump metailization (UBM) systems on Cu pads
Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New bumping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as the bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study.
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