用微拉曼光谱研究了高锗含量SiGe缓冲层的应变和成分

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088504

T. Perova, K. Lyutovich, D. Potapova, C. Parry, E. Kasper, R. A. Moore

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