基于28nm PolarFire sonos FPGA的总电离剂量表征

N. Rezzak, Jih-Jong Wang, Alex Cai, F. Hawley, E. Hamdy
{"title":"基于28nm PolarFire sonos FPGA的总电离剂量表征","authors":"N. Rezzak, Jih-Jong Wang, Alex Cai, F. Hawley, E. Hamdy","doi":"10.1109/radecs47380.2019.9745684","DOIUrl":null,"url":null,"abstract":"This paper presents Total Ionizing Dose (TID) results on 28nm PolarFire™ SONOS-based FPGA. Gamma and X-ray induced TID effects at the device and product level are presented and discussed. PolarFire shows very good TID performance and is radiation-tolerant up to 100 krad(SiO2).","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Ionizing Dose Characterization of 28 nm PolarFire SONOS-based FPGA\",\"authors\":\"N. Rezzak, Jih-Jong Wang, Alex Cai, F. Hawley, E. Hamdy\",\"doi\":\"10.1109/radecs47380.2019.9745684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents Total Ionizing Dose (TID) results on 28nm PolarFire™ SONOS-based FPGA. Gamma and X-ray induced TID effects at the device and product level are presented and discussed. PolarFire shows very good TID performance and is radiation-tolerant up to 100 krad(SiO2).\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

本文介绍了基于28nm PolarFire™sonos的FPGA上的总电离剂量(TID)结果。伽玛和x射线诱导的TID效应在设备和产品水平提出和讨论。PolarFire表现出非常好的TID性能,并且耐辐射高达100 krad(SiO2)。
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Total Ionizing Dose Characterization of 28 nm PolarFire SONOS-based FPGA
This paper presents Total Ionizing Dose (TID) results on 28nm PolarFire™ SONOS-based FPGA. Gamma and X-ray induced TID effects at the device and product level are presented and discussed. PolarFire shows very good TID performance and is radiation-tolerant up to 100 krad(SiO2).
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