{"title":"基于CMOS技术的射频应用螺旋电感器","authors":"Ji Chen, J. Liou","doi":"10.1109/IWNC.2006.4570986","DOIUrl":null,"url":null,"abstract":"In this paper, a physics-based model applicable for CMOS technology-based inductors will be developed. Our model development will cover both the symmetrical and asymmetrical inductors. In addition, an octagonal spiral pattern will be considered, but the approach applies generally to other non-circular patterns.","PeriodicalId":356139,"journal":{"name":"2006 International Workshop on Nano CMOS","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS technology-based spiral inductors for RF applications\",\"authors\":\"Ji Chen, J. Liou\",\"doi\":\"10.1109/IWNC.2006.4570986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a physics-based model applicable for CMOS technology-based inductors will be developed. Our model development will cover both the symmetrical and asymmetrical inductors. In addition, an octagonal spiral pattern will be considered, but the approach applies generally to other non-circular patterns.\",\"PeriodicalId\":356139,\"journal\":{\"name\":\"2006 International Workshop on Nano CMOS\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Workshop on Nano CMOS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWNC.2006.4570986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Workshop on Nano CMOS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWNC.2006.4570986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS technology-based spiral inductors for RF applications
In this paper, a physics-based model applicable for CMOS technology-based inductors will be developed. Our model development will cover both the symmetrical and asymmetrical inductors. In addition, an octagonal spiral pattern will be considered, but the approach applies generally to other non-circular patterns.
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