{"title":"模拟实际内存模块测试板上测量DDR2-SDRAM Vref噪声容限的方法","authors":"Y. Uematsu, H. Osaka, Y. Nishio, S. Hatano","doi":"10.1109/EPEP.2007.4387110","DOIUrl":null,"url":null,"abstract":"Aiming to achieve double data rate-synchronous DRAM (DDR-SDRAM) at low-cost and with high noise tolerance by setting adequate Vref target impedance, we have established a measurement setup for Vref noise tolerance of DDR2-SDRAM on test board simulating actual memory module and measured various properties. The measured Vref noise tolerance has strong frequency-dependency; the higher the frequency, the larger the noise tolerance. We believe that this is because the intrinsic low pass filter consisted of on-chip electrical components in the test chip.","PeriodicalId":402571,"journal":{"name":"2007 IEEE Electrical Performance of Electronic Packaging","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Method for Measuring Vref Noise Tolerance of DDR2-SDRAM on Test Board Simulatig Actual Memory Module\",\"authors\":\"Y. Uematsu, H. Osaka, Y. Nishio, S. Hatano\",\"doi\":\"10.1109/EPEP.2007.4387110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aiming to achieve double data rate-synchronous DRAM (DDR-SDRAM) at low-cost and with high noise tolerance by setting adequate Vref target impedance, we have established a measurement setup for Vref noise tolerance of DDR2-SDRAM on test board simulating actual memory module and measured various properties. The measured Vref noise tolerance has strong frequency-dependency; the higher the frequency, the larger the noise tolerance. We believe that this is because the intrinsic low pass filter consisted of on-chip electrical components in the test chip.\",\"PeriodicalId\":402571,\"journal\":{\"name\":\"2007 IEEE Electrical Performance of Electronic Packaging\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Electrical Performance of Electronic Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEP.2007.4387110\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Electrical Performance of Electronic Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEP.2007.4387110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Method for Measuring Vref Noise Tolerance of DDR2-SDRAM on Test Board Simulatig Actual Memory Module
Aiming to achieve double data rate-synchronous DRAM (DDR-SDRAM) at low-cost and with high noise tolerance by setting adequate Vref target impedance, we have established a measurement setup for Vref noise tolerance of DDR2-SDRAM on test board simulating actual memory module and measured various properties. The measured Vref noise tolerance has strong frequency-dependency; the higher the frequency, the larger the noise tolerance. We believe that this is because the intrinsic low pass filter consisted of on-chip electrical components in the test chip.