一种利用临时干膜抗蚀剂进行晶圆模拟和选择性加工的新型集成方案

Alexandre La Grappe, Evert Visker, A. Redolfi, Lan Peng, Karthik Muga, David Huls, S. Vanhaelemeersch, A. Lauwers, J. Ackaert
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引用次数: 1

摘要

利用光刻胶的自旋涂覆技术在具有高纵横比沟槽的硅上进行图像化是一个重大的挑战。为了在晶圆表面保持良好的抗蚀剂厚度均匀性,最大限度地减少深沟槽内的残留物,以及实现低拥有成本,导致了新的工艺技术。使用干膜抗蚀剂(DFR)的晶圆级层压已成为此类应用的有利选择。本文将介绍临时DFR在克服深硅沟槽中的独特应用。该集成方案除了解决传统旋转镀膜的问题外,还为晶圆模拟提供了新的可能性。将详细介绍这种方法的一个示例。这种独特的集成流程可以带来新的应用,否则在传感器,微流体和MEMS等技术领域是不可行的。
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A novel integration scheme for wafer singulation and selective processing using temporary dry film resist
Patterning on Si with high aspect ratio trenches by spin-coating of photoresist faces significant challenges. The desire to maintain a good thickness uniformity of resist on wafer surface, to minimize any residue inside deep trenches, as well as enabling low cost of ownership has led to new process techniques. Wafer level lamination using dry film resist (DFR) has emerged as a favorable option for such applications. In this paper, a unique application of temporary DFR to overcome deep Si trenches will be presented. The integration scheme offers novel possibilities for wafer singulation in addition to resolving the issues with conventional spin-coating. An example of this approach will be presented in detail. This unique integration flow can lead to new applications that would otherwise not be feasible in technological areas such as sensor, microfluidics and MEMS.
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