{"title":"具有腔诱导反制导的单模垂直腔面发射激光器","authors":"T. Oh, D. Huffaker, M. MacDaniel, D. Deppe","doi":"10.1109/LEOSST.1997.619112","DOIUrl":null,"url":null,"abstract":"In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding\",\"authors\":\"T. Oh, D. Huffaker, M. MacDaniel, D. Deppe\",\"doi\":\"10.1109/LEOSST.1997.619112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding
In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.
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