用于亚毫米模拟应用的氧化堆工程双环绕门(OSE-DSG) MOSFET

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI:10.1109/EDKCON.2018.8770455

S. Srivastava, Shreya Nandy, Sonam Rewari, R. Gupta

{"title":"用于亚毫米模拟应用的氧化堆工程双环绕门(OSE-DSG) MOSFET","authors":"S. Srivastava, Shreya Nandy, Sonam Rewari, R. Gupta","doi":"10.1109/EDKCON.2018.8770455","DOIUrl":null,"url":null,"abstract":"In this paper, we have proposed Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET For Submillimeter Analog Application using SILVACO ATLAS 3D device simulator. Here, we have shown the comparison between the simulated results of OSE-DSG and the traditional MOSFETs- Surrounding Gate (SG-MOSFET), Surrounding Gate with Gate Stack MOSFET (SG-GS MOSFET) and Double Surrounding Gate MOSFET (DSG MOSFET) to analyze its performance and applications. It is observed that OSE-DSG MOSFET shows better performance as it has high Drain Current, Current Gain, Transconductance (gm) and Maximam Transducer Power Gain (MTPG). The subthreshold slope obtained for OSE-DSG MOSFET is 65 mV/decade which is nearest to the ideal value of 60 mV/decade so it is highly desirable for high-frequency applications.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET for Submillimeter Analog Application\",\"authors\":\"S. Srivastava, Shreya Nandy, Sonam Rewari, R. Gupta\",\"doi\":\"10.1109/EDKCON.2018.8770455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have proposed Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET For Submillimeter Analog Application using SILVACO ATLAS 3D device simulator. Here, we have shown the comparison between the simulated results of OSE-DSG and the traditional MOSFETs- Surrounding Gate (SG-MOSFET), Surrounding Gate with Gate Stack MOSFET (SG-GS MOSFET) and Double Surrounding Gate MOSFET (DSG MOSFET) to analyze its performance and applications. It is observed that OSE-DSG MOSFET shows better performance as it has high Drain Current, Current Gain, Transconductance (gm) and Maximam Transducer Power Gain (MTPG). The subthreshold slope obtained for OSE-DSG MOSFET is 65 mV/decade which is nearest to the ideal value of 60 mV/decade so it is highly desirable for high-frequency applications.\",\"PeriodicalId\":344143,\"journal\":{\"name\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON.2018.8770455\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在本文中，我们使用SILVACO ATLAS 3D器件模拟器提出了用于亚毫米模拟应用的氧化堆工程双环绕门(OSE-DSG) MOSFET。在这里，我们展示了osse -DSG与传统MOSFET的模拟结果的比较-环绕栅(SG-MOSFET)，环绕栅带栅堆MOSFET (SG-GS MOSFET)和双环绕栅MOSFET (DSG MOSFET)，以分析其性能和应用。可以观察到，OSE-DSG MOSFET具有较高的漏极电流，电流增益，跨导(gm)和最大换能器功率增益(MTPG)，因此表现出更好的性能。osse - dsg MOSFET获得的亚阈值斜率为65 mV/ 10年，最接近60 mV/ 10年的理想值，因此非常适合高频应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET for Submillimeter Analog Application

In this paper, we have proposed Oxide Stack Engineered Double Surrounding Gate (OSE-DSG) MOSFET For Submillimeter Analog Application using SILVACO ATLAS 3D device simulator. Here, we have shown the comparison between the simulated results of OSE-DSG and the traditional MOSFETs- Surrounding Gate (SG-MOSFET), Surrounding Gate with Gate Stack MOSFET (SG-GS MOSFET) and Double Surrounding Gate MOSFET (DSG MOSFET) to analyze its performance and applications. It is observed that OSE-DSG MOSFET shows better performance as it has high Drain Current, Current Gain, Transconductance (gm) and Maximam Transducer Power Gain (MTPG). The subthreshold slope obtained for OSE-DSG MOSFET is 65 mV/decade which is nearest to the ideal value of 60 mV/decade so it is highly desirable for high-frequency applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE Electron Devices Kolkata Conference (EDKCON)

自引率

0.00%

发文量