石威尔士缺陷对之字形石墨烯纳米带电阻的影响

M. Bagheri
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引用次数: 1

摘要

通过改变石墨烯纳米带中原子的自旋,可以将之字形石墨烯纳米带的电子特性从半导体态显著改变为金属态。本文研究了石-威尔士缺陷对之字形石墨烯纳米带在铁磁和反铁磁状态下的影响。通过在石墨烯纳米带的中心施加Stone-Wales缺陷来计算磁阻。仿真基于DFT方法。仿真结果表明,施加Stone-Wales缺陷后,带隙比理想状态增大,电导率减小,电流减小,导致在电压低于0.5 V时的磁阻比理想状态减小。在电压高于0.5 V时,磁阻比理想状态增加。磁电阻也可以得到负值,在1v时达到650%。石墨烯纳米带的大可调磁阻对器件应用具有很大的吸引力。
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Influence of Stone Wales defect on magnetic resistance of zigzag graphene nanoribbons
The electronic properties of zigzag graphene nanoribbons can be significantly modified from semiconducting to metallic states by change the atom's spin in graphene nano ribbons. In this paper, the impact of Stone-Wales defect on a Zigzag Graphene Nano-ribbon has been investigated for ferromagnetic and anti-ferromagnetic states. The Magnetic Resistance is calculated by applying Stone-Wales defect in the center of Graphene Nano-ribbons. The simulations are based on DFT method. The simulation results show that, by applying Stone-Wales defect, the bandgap increases in comparison to the ideal state, the conductivity decreases, and so does the current, and as a result of that, the Magnetic Resistance, at voltages below 0.5 V, decreases in comparison to the ideal state. At voltages above 0.5 V, the Magnetic Resistance increases in comparison to the ideal state. Also Magnetic Resistance can get negative values and reaches 650% at 1 V. The large tunable Magnetic Resistance of graphene nano ribbons is attractive to device applications.
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