Compact Design of 60-GHz Wilkinson Power Dividers in a 65-nm CMOS Process for Monolithic Microwave Integrated Circuits

This paper reports miniature designs of 60-GHz Wilkinson power dividers based on a multi-metallization transmission line structure for monolithic microwave integrated circuits (MMICs). In a 65-nm 2P8M CMOS process, a straight elongated design occupies an area of 56 × 610 μm2, giving an insertion loss lower than 0.89 dB, a return loss better than 30 dB and an isolation higher than 45 dB at 60 GHz. The meandered design further reduces the chip area to 68 × 310 μm2 (≈ 0.021 mm2) and it also provides a low power loss and a high isolation in a frequency range over 20 GHz. The compact designs are extendable to other deep sub-micron CMOS processes for development of MMICs.