{"title":"半导体中电荷输运模拟的全频带元胞自动机","authors":"M. Saraniti, S. Goodnick","doi":"10.1109/IWCE.1998.742717","DOIUrl":null,"url":null,"abstract":"The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A full-band cellular automaton for charge transport simulation in semiconductors\",\"authors\":\"M. Saraniti, S. Goodnick\",\"doi\":\"10.1109/IWCE.1998.742717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A full-band cellular automaton for charge transport simulation in semiconductors
The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.
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