提高晶圆级可靠性表征的速度:新方法和限制

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904909

B. Bittel, S. Vadlamani, S. Ramey, S. Padiyar

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引用次数: 2

摘要

为了支持晶体管技术的发展，需要进行大量的晶圆级可靠性测试。传统的测试需要相当长的时间，这严重限制了组织的可靠性。我们提出了两种有助于提高晶圆级可靠性测量数据速度的方法，并讨论了它们目前的局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Increasing velocity of wafer level reliability characterization: Novel approaches and limitations

Tremendous amounts of wafer level reliability testing is required to support transistor technology development efforts. Conventional testing takes considerable time which severely limits reliability organizations. We present two approaches that help increase data velocity for wafer level reliability measurements and discuss their current limitations.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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