用于mosfet和tfet的超薄绝缘体上化合物半导体

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994400

R. Kapadia, K. Takei, A. C. Ford, Hui Fang, S. Chuang, M. Madsen, S. Krishna, A. Javey

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引用次数: 0

摘要

由于其高电子迁移率，III-V半导体是未来器件中很有前途的通道材料[1]。InAs就是这样一种很有前途的材料;然而，由于小带隙(Eg ~ 0.36 eV)，大块器件是不可行的。此外，由于固有的晶格失配，硅上薄层的异质外延生长具有挑战性。在这里，我们提出了一个开发用于在绝缘体(XOI)上集成单晶超薄化合物半导体层的平台[2]，类似于传统的SOI衬底。

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Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs

Due to their high electron mobility, III–V semiconductors are promising channel materials for future devices [1]. InAs is one such promising material; however, due to the small bandgap (Eg∼0.36 eV) bulk devices are not feasible. In addition, heteroepitaxial growth of thin layers on Si is challenging due to the inherent lattice mismatch. Here, we present a platform developed for integration of single-crystalline ultra-thin compound semiconductor layers on insulator (XOI)[2], resembling the conventional SOI substrates.

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69th Device Research Conference

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