Q. Lu, Y. Qi, Cezhou Zhao, Chun Zhao, Stephen Taylor, P. Chalker
{"title":"采用ZrO2和HfO2介质的MOS器件的异常电容电压滞回","authors":"Q. Lu, Y. Qi, Cezhou Zhao, Chun Zhao, Stephen Taylor, P. Chalker","doi":"10.1109/ISNE.2016.7543290","DOIUrl":null,"url":null,"abstract":"Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics\",\"authors\":\"Q. Lu, Y. Qi, Cezhou Zhao, Chun Zhao, Stephen Taylor, P. Chalker\",\"doi\":\"10.1109/ISNE.2016.7543290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics
Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.
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