{"title":"利用新型相位和暗场x射线成像技术表征先进封装的缺陷","authors":"S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun","doi":"10.31399/asm.edfa.2020-3.p018","DOIUrl":null,"url":null,"abstract":"\n Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging\",\"authors\":\"S. Lau, S. Gul, G. Zan, D. Vine, S. Lewis, W. Yun\",\"doi\":\"10.31399/asm.edfa.2020-3.p018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.\",\"PeriodicalId\":431761,\"journal\":{\"name\":\"EDFA Technical Articles\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EDFA Technical Articles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.edfa.2020-3.p018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2020-3.p018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defect Characterization of Advanced Packages using Novel Phase and Dark Field X-Ray Imaging
Modified Talbot X-ray interferometry provides three contrast modes simultaneously: absorption, phase, and dark field/scattering. This article describes the powerful new imaging technique and shows how it is used to characterize various types of defects in advanced semiconductor packages.