The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

The competition behavior between two Group V atoms is significant in the epitaxy growth of III-V-V compounds. We have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition behavior between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple quantum wells (MQWs) on GaAs (100) substrates by gas-source molecular-beam epitaxy (GSMBE). The strain-induced incorporation coefficient due to lattice mismatch between the growing film and substrate is also taken into account.