Shuangshuang Zhang, Ting Li, Lele Jin, Jiaqi Yang, Lin He, F. Lin
{"title":"采用自抖动技术的11位1.2V 40.3μW SAR ADC","authors":"Shuangshuang Zhang, Ting Li, Lele Jin, Jiaqi Yang, Lin He, F. Lin","doi":"10.1109/IEEE-IWS.2016.7585432","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power 11-bit 1-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) that uses a self-dithering technique. The LSBs is employed as a dither to improve the resolution. Compared to converters that use the conventional dithering architecture, simulation results show that the proposed self-dithering technique improve the DNL performance with simplified hardware. The prototype is fabricated in 180nm 1P6M CMOS with MOM capacitor. At a 1.2-V supply and 1 MS/s, the post-layout simulation result shows an SNDR of 63.8 dB and consumes 40.3μW, and a figure of merit (FOM) of 32 fJ/conversion-step. The total area of the chip is 1 mm×1 mm.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 11-bit 1.2V 40.3μW SAR ADC with self-dithering technique\",\"authors\":\"Shuangshuang Zhang, Ting Li, Lele Jin, Jiaqi Yang, Lin He, F. Lin\",\"doi\":\"10.1109/IEEE-IWS.2016.7585432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-power 11-bit 1-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) that uses a self-dithering technique. The LSBs is employed as a dither to improve the resolution. Compared to converters that use the conventional dithering architecture, simulation results show that the proposed self-dithering technique improve the DNL performance with simplified hardware. The prototype is fabricated in 180nm 1P6M CMOS with MOM capacitor. At a 1.2-V supply and 1 MS/s, the post-layout simulation result shows an SNDR of 63.8 dB and consumes 40.3μW, and a figure of merit (FOM) of 32 fJ/conversion-step. The total area of the chip is 1 mm×1 mm.\",\"PeriodicalId\":185971,\"journal\":{\"name\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2016.7585432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 11-bit 1.2V 40.3μW SAR ADC with self-dithering technique
This paper presents a low-power 11-bit 1-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) that uses a self-dithering technique. The LSBs is employed as a dither to improve the resolution. Compared to converters that use the conventional dithering architecture, simulation results show that the proposed self-dithering technique improve the DNL performance with simplified hardware. The prototype is fabricated in 180nm 1P6M CMOS with MOM capacitor. At a 1.2-V supply and 1 MS/s, the post-layout simulation result shows an SNDR of 63.8 dB and consumes 40.3μW, and a figure of merit (FOM) of 32 fJ/conversion-step. The total area of the chip is 1 mm×1 mm.