{"title":"采用高密度等离子溅射沉积高稳定的顶栅顶接触ITZO TFT","authors":"J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park","doi":"10.1109/AM-FPD.2016.7543658","DOIUrl":null,"url":null,"abstract":"Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering\",\"authors\":\"J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park\",\"doi\":\"10.1109/AM-FPD.2016.7543658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering
Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.
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