硅光子技术中的低π值热移相器

S. Pal, Frank Pavlik, F. G. Anderson, A. Aboketaf, R. Sporer, Michelle Zhang, Shenghua Song
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引用次数: 0

摘要

对利用硅光子学技术研制的热移相器进行了理论和实验研究。研究还表明,与使用标准热移相器(P π~V32 mW)开发的MZI结构相比,使用密封下切热移相器开发的Mach - Zehnder干涉仪(MZI)结构具有更低的P$π (~V7 mW),而两者具有相似的波导截面几何形状。利用热移相器开发的MZI结构被设计为仅在o波段(1260-1360nm)和扩展c波段(1500-1600nm)上引导TE偏振光。
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Low Pπ- value Thermal Phase-Shifters in Si-Photonics Technology
A theoretical and experimental study has been carried out on thermal phase-shifters developed using silicon photonics technology. It has also been shown that Mach Zehnder Interferometer (MZI) structures developed with sealed under-cut thermal phase-shifters show lower value of $P$π (~V7 mW) compared to MZI structures developed using standard thermal phase-shifters (P π~V32 mW) while both have waveguides with similar cross-sectional geometries. MZI structures developed with thermal phase-shifters were designed to guide only TE- polarized light over the O-band (1260-1360nm) and extended C-Band (1500-1600nm).
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