{"title":"一个1024位，融合链路CMOS PROM","authors":"J. Schroeder, R. Goslin","doi":"10.1109/ISSCC.1977.1155652","DOIUrl":null,"url":null,"abstract":"PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 1024-bit, fused link CMOS PROM\",\"authors\":\"J. Schroeder, R. Goslin\",\"doi\":\"10.1109/ISSCC.1977.1155652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.\",\"PeriodicalId\":416313,\"journal\":{\"name\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1977.1155652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1977.1155652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PROGRAMMABLE read-only memories (PRO%) have been available for several years. Previous fused-link PROMS‘ 3‘ have used bipolar technology with its accompanying high power dissipation. MOS PROMS have used charge storaxe in dualdielectric3 or floating-gate structures. The operating range of these memories is limited by charge loss at elevated temperature^^'^. This paper will describe a fused-link CMOS PROhI which overcomes these earlicr limitations. The basic features are summarized in Table I.
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